A Novel Approach for Effective Dose Measurements in Dual-energy Ct.

A novel method was presented for the effective dose (ED) measurement with metal-oxide-semiconductor field-effect transistor (MOSFET) detectors in dual-energy (DE) dual-source (DS) computed tomography (CT) scanner. This study demonstrated that the mean energy of the combined spectrum in dual-source computed tomography can be used to measure the ED. For validation, the MOSFET dose at the centre cavity of a CT dose index (CTDI) body phantom was compared with the dose measured with an energy-independent ion chamber (IC). A clinical abdomen/pelvis scan was performed with an adult anthropomorphic phantom, and ED was compared between the MOSFET method and the dose length product (DLP) method. The tissue doses in the CTDI phantom were 2.08±(2.70 %) with IC and 2.20±(4.82 %) cGy with MOSFET; the per cent difference was 5.91 %, and the t-test showed that there was no statistically significant difference. EDs for the abdomen/pelvis scans were 5.01±(2.34 %) mSv with MOSFET and 5.56 mSv with the DLP method.